Datasheet > MTP3001N3

MTP3001N3

更新时间： 2024-09-14 05:51:03

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
5页	228K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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MTP3001N3 数据手册

Spec. No. : C400N3

Issued Date : 2006.10.17

Revised Date :

CYStech Electronics Corp.

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

MTP3001N3

Page No. : 1/5

Description

The MTP3001N3 is a P-channel enhancement-mode MOSFET, providing the designer with

the best combination of fast switching, ruggedized device design, low on-resistance and cost

effectiveness.

Features

• R_DS(ON)=50m @V_GS=-10V, I_D=-5.3A

R_DS(ON)=75m @V_GS=-4.5V, I_D=-4.2A

• Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free package

Applications

• Power management in notebook computer, portable equipment and battery powered systems.

Equivalent Circuit

Outline

MTP3001N3

SOT-23

G：Gate

S：Source

D：Drain

MTP3001N3

CYStek Product Specification

12 3 4 5

中文翻译

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