MTP3055ELC

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摩托罗拉 - MOTOROLA		/
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by MTP3055V/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

12 AMPERES

60 VOLTS

TMOS V is a new technology designed to achieve an on–resis-

tance area product about one–half that of standard MOSFETs. This

new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOS E–FET

designs, TMOS V is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and

power motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against

unexpected voltage transients.

= 0.15 OHM

DS(on)

New Features of TMOS V

•

On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low R Technology

DS(on)

Faster Switching than E–FET Predecessors

•

Features Common to TMOS V and TMOS E–FETS

•

Avalanche Energy Specified

and V Specified at Elevated Temperature

Static Parameters are the Same for both TMOS V and

TMOS E–FET

CASE 221A–06, Style 5

TO–220AB

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

± 20

± 25

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous @ 25°C

Drain Current — Continuous @ 100°C

7.3

Adc

Apk

Drain Current — Single Pulse (t ≤ 10 µs)

Total Power Dissipation @ 25°C

Derate above 25°C

0.32

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 175

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V = 10 Vdc, I = 12 Apk, L = 1.0 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

3.13

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
MTP3055ELD1	MOTOROLA	获取价格	12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELN	MOTOROLA	获取价格	12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELS	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELT	MOTOROLA	获取价格	12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELU2	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELW	MOTOROLA	获取价格	12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELWC	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055EN	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ES	MOTOROLA	获取价格	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ET	MOTOROLA	获取价格	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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