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MTP3055ES

更新时间： 2024-11-24 13:11:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
8页 163K
描述
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP3055ES 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.7外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：60 V
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.15 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：40 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTP3055ES 数据手册

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Order this document  
by MTP3055V/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
12 AMPERES  
60 VOLTS  
TMOS V is a new technology designed to achieve an on–resis-  
tance area product about one–half that of standard MOSFETs. This  
new technology more than doubles the present cell density of our  
50 and 60 volt TMOS devices. Just as with our TMOS E–FET  
designs, TMOS V is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and  
power motor controls, these devices are particularly well suited for  
bridge circuits where diode speed and commutating safe operating  
areas are critical and offer additional safety margin against  
unexpected voltage transients.  
R
= 0.15 OHM  
DS(on)  
TM  
New Features of TMOS V  
•
On–resistance Area Product about One–half that of Standard  
MOSFETs with New Low Voltage, Low R Technology  
D
DS(on)  
Faster Switching than E–FET Predecessors  
•
Features Common to TMOS V and TMOS E–FETS  
•
•
•
Avalanche Energy Specified  
and V Specified at Elevated Temperature  
Static Parameters are the Same for both TMOS V and  
TMOS E–FET  
G
CASE 221A–06, Style 5  
TO–220AB  
I
DSS  
DS(on)  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
60  
GS  
V
± 20  
± 25  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous @ 25°C  
Drain Current — Continuous @ 100°C  
I
I
12  
7.3  
37  
Adc  
Apk  
D
D
Drain Current — Single Pulse (t ≤ 10 µs)  
I
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
D
48  
0.32  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 175  
72  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 12 Apk, L = 1.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
θJC  
R
θJA  
3.13  
62.5  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1996  
12345678

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与MTP3055ES相关器件

型号 品牌 获取价格 描述 数据表
MTP3055ET MOTOROLA

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 		12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055EU MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055EU2 MOTOROLA

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 		12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055EUA MOTOROLA

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 		暂无描述
MTP3055EW MOTOROLA

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 		12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055EWC MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055V MOTOROLA

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 		TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
MTP3055V FAIRCHILD

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 		N-Channel Enhancement Mode Field Effect Transistor
MTP3055VG ONSEMI

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 		12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, CASE 221A-09, 3 PIN
MTP3055VL MOTOROLA

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 		TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

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