生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.33 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 154 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 30 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.05 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 190 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 90 W | 最大功率耗散 (Abs): | 90 W |
最大脉冲漏极电流 (IDM): | 105 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 330 ns |
最大开启时间(吨): | 550 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP30N08M | MOTOROLA |
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POWER FIELD EFFECT TRANSISTOR | |
MTP30P06 | MOTOROLA |
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TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM | |
MTP30P06V | MOTOROLA |
获取价格 |
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM | |
MTP30X | NELLSEMI |
获取价格 |
Glass Passivated Three-Phase Bridge Rectifier, 30A | |
MTP315SBAV-50.000MHZ | MMD |
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Oscillator, | |
MTP315SBAV-9.600MHZ | MMD |
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Oscillator, | |
MTP315SBV-9.600MHZ | MMD |
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Oscillator, | |
MTP337M010P1C | CDE |
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Tantalum Capacitor, Polarized, Tantalum (wet), 10V, 20% +Tol, 20% -Tol, 330uF, Through Hol | |
MTP33N10 | MOTOROLA |
获取价格 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM | |
MTP33N10E | MOTOROLA |
获取价格 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |