MTP30P06

更新时间： 2024-11-23 22:45:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	193K
描述
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MTP30P06 数据手册

Order this document

by MTP30P06V/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

30 AMPERES

60 VOLTS

TMOS V is a new technology designed to achieve an on–resis-

tance area product about one–half that of standard MOSFETs. This

new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOS E–FET

designs, TMOS V is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and

power motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against

unexpected voltage transients.

= 0.080 OHM

DS(on)

New Features of TMOS V

•

On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low R Technology

DS(on)

Faster Switching than E–FET Predecessors

•

Features Common to TMOS V and TMOS E–FETS

•

Avalanche Energy Specified

and V Specified at Elevated Temperature

Static Parameters are the Same for both TMOS V and

TMOS E–FET

CASE 221A–06, Style 5

TO–220AB

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

DSS

Vdc

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage — Continuous

Gate–to–Source Voltage — Non–repetitive (t ≤ 10 ms)

± 15

± 25

Vdc

Vpk

GSM

Drain Current — Continuous @ 25°C

Drain Current — Continuous @ 100°C

105

Adc

Drain Current — Single Pulse (t ≤ 10 µs)

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

125

0.83

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 175

450

°C

Single Pulse Drain–to–Source Avalanche Energy — STARTING T = 25°C

= 25 Vdc, V = 10 Vdc, PEAK I = 30 Apk, L = 1.0 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

1.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

中文翻译

下载PDF

与MTP30P06相关器件

型号	品牌	获取价格	描述	数据表
MTP30P06V	MOTOROLA	获取价格	TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTP30X	NELLSEMI	获取价格	Glass Passivated Three-Phase Bridge Rectifier, 30A
MTP315SBAV-50.000MHZ	MMD	获取价格	Oscillator,
MTP315SBAV-9.600MHZ	MMD	获取价格	Oscillator,
MTP315SBV-9.600MHZ	MMD	获取价格	Oscillator,
MTP337M010P1C	CDE	获取价格	Tantalum Capacitor, Polarized, Tantalum (wet), 10V, 20% +Tol, 20% -Tol, 330uF, Through Hol
MTP33N10	MOTOROLA	获取价格	TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
MTP33N10E	MOTOROLA	获取价格	TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
MTP33N10E	ONSEMI	获取价格	33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN
MTP33N10E16	MOTOROLA	获取价格	33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

与MTP30P06相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

MTP30P06

MTP30P06 数据手册

与MTP30P06相关器件

与MTP30P06相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MTP30P06

MTP30P06 数据手册

与MTP30P06相关器件

与MTP30P06相关文章

您还可以找

您在本页遇到什么问题？