MTP33N10EC

更新时间： 2024-02-03 10:45:40

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摩托罗拉 - MOTOROLA		/
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MTP33N10EC 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

33 AMPERES

100 VOLTS

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 0.06 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

100

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

100

Gate–Source — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Voltage — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

Adc

Apk

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

545

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V = 10 Vdc, I = 33 Apk, L = 1.000 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

— Junction to Ambient

θJC

θJA

1.00

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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