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MTP33N10EA PDF预览

MTP33N10EA

更新时间： 2024-11-24 13:11:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
8页 243K
描述
33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP33N10EA 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.75外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：100 V
最大漏极电流 (ID)：33 A最大漏源导通电阻：0.058 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：150 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTP33N10EA 数据手册

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Order this document  
by MTP33N10E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
33 AMPERES  
100 VOLTS  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.06 OHM  
DS(on)  
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
D
G
CASE 221A–06, Style 5  
TO–220AB  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
100  
Gate–Source — Continuous  
— Non–Repetitive (t ≤ 10 ms)  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Voltage — Continuous  
— Continuous @ 100°C  
— Single Pulse (t ≤ 10 µs)  
I
I
33  
20  
99  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
125  
1.0  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
545  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 33 Apk, L = 1.000 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
1.00  
62.5  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1995  
12345678

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MTP33N10EAJ MOTOROLA

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MTP33N10ED1 MOTOROLA

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 		Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
MTP33N10EL MOTOROLA

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 		Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
MTP33N10EN MOTOROLA

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 		Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
MTP33N10ES MOTOROLA

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 		33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP33N10ET MOTOROLA

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 		Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
MTP33N10EU MOTOROLA

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 		Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
MTP33N10EU2 MOTOROLA

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 		33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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