Datasheet > MTP33N10E

MTP33N10E

更新时间： 2024-01-26 08:36:34

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	93K
描述
33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN

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技术参数
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MTP33N10E 技术参数

生命周期：	Obsolete	零件包装代码：	SFM
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.25	Is Samacsys：	N
配置：	SINGLE	最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	33 A	最大漏源导通电阻：	0.058 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
功耗环境最大值：	125 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

MTP33N10E 数据手册

MTP33N10E

Preferred Device

Power MOSFET

33 Amps, 100 Volts

N−Channel TO−220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain−to−source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

33 AMPERES

100 VOLTS

_DS(on)= 60 mΩ

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

N−Channel

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−Source Voltage

Symbol

Value

100

Unit

Vdc

DSS

Drain−Gate Voltage (R = 1.0 MΩ)

100

MARKING DIAGRAM

DGR

& PIN ASSIGNMENT

Gate−Source Voltage

− Continuous

GSM

± 20

± 40

Vdc

Vpk

− Non−Repetitive (t ≤ 10 ms)

Drain

Drain Current − Continuous

Drain Current − Continuous @ 100°C

Drain Current − Single Pulse (t ≤ 10 µs)

Adc

Apk

TO−220AB

CASE 221A

STYLE 5

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

MTP33N10E

LLYWW

Operating and Storage Temperature Range

T , T

− 55 to

150

°C

stg

Gate

Source

Single Pulse Drain−to−Source Avalanche

545

Energy − Starting T = 25°C

(V = 25 Vdc, V = 10 Vdc,

Drain

I = 33 Apk, L = 1.000 mH, R = 25 Ω)

Thermal Resistance

− Junction to Case

− Junction to Ambient

°C/W

°C

MTP33N10E

= Device Code

= Location Code

= Year

1.0

62.5

= Work Week

Maximum Lead Temperature for Soldering

260

Purposes, 1/8″ from case for 10 sec.

ORDERING INFORMATION

Device

MTP33N10E

Package

Shipping

50 Units/Rail

TO−220AB

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 4

MTP33N10E/D

12 3 4 5 6 7 8

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与MTP33N10E相关器件

型号	品牌	描述	获取价格	数据表
MTP33N10E16	MOTOROLA	33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格
MTP33N10EA	MOTOROLA	33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格
MTP33N10EAF	MOTOROLA	Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me	获取价格
MTP33N10EAJ	MOTOROLA	Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me	获取价格
MTP33N10EC	MOTOROLA	暂无描述	获取价格
MTP33N10ED1	MOTOROLA	Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me	获取价格

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