生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.75 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 33 A |
最大漏源导通电阻: | 0.058 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 150 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MTP33N10E | MOTOROLA | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
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MTP33N10E | ONSEMI | 33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN |
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MTP33N10E16 | MOTOROLA | 33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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MTP33N10EA | MOTOROLA | 33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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MTP33N10EAF | MOTOROLA | Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me |
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MTP33N10EAJ | MOTOROLA | Power Field-Effect Transistor, 33A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me |
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