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MTP3055V PDF预览

MTP3055V

更新时间: 2024-02-03 10:26:46
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 248K
描述
N-Channel Enhancement Mode Field Effect Transistor

MTP3055V 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.18 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):48 W
最大脉冲漏极电流 (IDM):42 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MTP3055V 数据手册

 浏览型号MTP3055V的Datasheet PDF文件第2页浏览型号MTP3055V的Datasheet PDF文件第3页 
May 1999  
MTP3055V  
N-Channel Enhancement Mode Field Effect Transistor  
Features  
General Description  
• 12 A, 60 V. RDS(ON) = 0.150 @ VGS = 10 V  
This N-Channel MOSFET has been designed specifically  
for low voltage, high speed switching applications i.e.  
power supplies and power motor controls.  
• Critical DC electrical parameters specified at elevated  
temperature.  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
• Rugged internal source-drain diode can eliminate the  
need for an external Zener diode transient suppressor.  
• 175°C maximum junction temperature rating.  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies).  
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1999 Fairchild Semiconductor Corporation  
MTP3055V Rev. A  

MTP3055V 替代型号

型号 品牌 替代类型 描述 数据表
MTP3055VL FAIRCHILD

类似代替

N-Channel Logic Level Enhancement Mode Field Effect Transistor
RFP3055LE FAIRCHILD

类似代替

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFP3055 FAIRCHILD

类似代替

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

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