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MTP3055A PDF预览

MTP3055A

更新时间: 2024-11-01 12:58:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 83K
描述
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

MTP3055A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.21
其他特性:FAST SWITCHING配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):26 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MTP3055A 数据手册

 浏览型号MTP3055A的Datasheet PDF文件第2页浏览型号MTP3055A的Datasheet PDF文件第3页浏览型号MTP3055A的Datasheet PDF文件第4页浏览型号MTP3055A的Datasheet PDF文件第5页浏览型号MTP3055A的Datasheet PDF文件第6页浏览型号MTP3055A的Datasheet PDF文件第7页 
MTP3055E  
N - CHANNEL 60V - 0.1- 12A TO-220  
STripFET MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
MTP3055E  
60 V  
< 0.15 Ω  
12 A  
TYPICAL RDS(on) = 0.1 Ω  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
175oC OPERATING TEMPERATURE  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
2
1
TO-220  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
60  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
60  
20  
V
±
o
ID  
Drain Current (continuous) at Tc = 25 C  
12  
A
o
IDM  
Drain Current (pulsed) at Tc = 100 C  
9
48  
A
I
DM()  
Ptot  
Tstg  
Tj  
Drain Current (pulsed)  
A
o
Total Dissipation at Tc = 25 C  
40  
W
oC  
oC  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.  
1/8  
July 1999  

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