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MTP3055EL

更新时间： 2024-11-01 13:11:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
8页 163K
描述
Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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MTP3055EL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.21
其他特性：LOGIC LEVEL COMPATIBLE, LEADFORM OPTIONS ARE AVAILABLE外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：12 A最大漏极电流 (ID)：12 A
最大漏源导通电阻：0.18 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：40 W最大功率耗散 (Abs)：40 W
最大脉冲漏极电流 (IDM)：26 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTP3055EL 数据手册

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Order this document  
by MTP3055V/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
12 AMPERES  
60 VOLTS  
TMOS V is a new technology designed to achieve an on–resis-  
tance area product about one–half that of standard MOSFETs. This  
new technology more than doubles the present cell density of our  
50 and 60 volt TMOS devices. Just as with our TMOS E–FET  
designs, TMOS V is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and  
power motor controls, these devices are particularly well suited for  
bridge circuits where diode speed and commutating safe operating  
areas are critical and offer additional safety margin against  
unexpected voltage transients.  
R
= 0.15 OHM  
DS(on)  
TM  
New Features of TMOS V  
•
On–resistance Area Product about One–half that of Standard  
MOSFETs with New Low Voltage, Low R Technology  
D
DS(on)  
Faster Switching than E–FET Predecessors  
•
Features Common to TMOS V and TMOS E–FETS  
•
•
•
Avalanche Energy Specified  
and V Specified at Elevated Temperature  
Static Parameters are the Same for both TMOS V and  
TMOS E–FET  
G
CASE 221A–06, Style 5  
TO–220AB  
I
DSS  
DS(on)  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
60  
GS  
V
± 20  
± 25  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous @ 25°C  
Drain Current — Continuous @ 100°C  
I
I
12  
7.3  
37  
Adc  
Apk  
D
D
Drain Current — Single Pulse (t ≤ 10 µs)  
I
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
D
48  
0.32  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 175  
72  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 12 Apk, L = 1.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
θJC  
R
θJA  
3.13  
62.5  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1996  
12345678

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MTP3055ELA MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELA16A MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELAF MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELC MOTOROLA

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 		暂无描述
MTP3055ELD1 MOTOROLA

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 		12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELN MOTOROLA

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 		12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELS MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELT MOTOROLA

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 		12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3055ELU2 MOTOROLA

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 		Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
MTP3055ELW MOTOROLA

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 		12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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