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MTP3055 PDF预览

MTP3055

更新时间: 2024-10-31 22:45:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 83K
描述
N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

MTP3055 数据手册

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MTP3055E  
N - CHANNEL 60V - 0.1- 12A TO-220  
STripFET MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
MTP3055E  
60 V  
< 0.15 Ω  
12 A  
TYPICAL RDS(on) = 0.1 Ω  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
175oC OPERATING TEMPERATURE  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
2
1
TO-220  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
60  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
60  
20  
V
±
o
ID  
Drain Current (continuous) at Tc = 25 C  
12  
A
o
IDM  
Drain Current (pulsed) at Tc = 100 C  
9
48  
A
I
DM()  
Ptot  
Tstg  
Tj  
Drain Current (pulsed)  
A
o
Total Dissipation at Tc = 25 C  
40  
W
oC  
oC  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.  
1/8  
July 1999  

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