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MTD5N25ET4 PDF预览

MTD5N25ET4

更新时间： 2024-11-24 14:53:59
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 251K
描述
5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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MTD5N25ET4 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.11雪崩能效等级（Eas）：84 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：5 A最大漏极电流 (ID)：5 A
最大漏源导通电阻：1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：50 W
最大脉冲漏极电流 (IDM)：15 A认证状态：Not Qualified
子类别：FET General Purpose Powers表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTD5N25ET4 数据手册

 浏览型号MTD5N25ET4的Datasheet PDF文件第2页浏览型号MTD5N25ET4的Datasheet PDF文件第3页浏览型号MTD5N25ET4的Datasheet PDF文件第4页浏览型号MTD5N25ET4的Datasheet PDF文件第5页浏览型号MTD5N25ET4的Datasheet PDF文件第6页浏览型号MTD5N25ET4的Datasheet PDF文件第7页 
Order this document  
by MTD5N25E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
5.0 AMPERES  
250 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 1.0 OHM  
DS(on)  
D
CASE 369A–13, Style 2  
DPAK  
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
Surface Mount Package Available in 16 mm, 13–inch/2500  
Unit Tape & Reel, Add –T4 Suffix to Part Number  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–Source Voltage  
V
250  
Vdc  
Vdc  
DSS  
Drain–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
250  
Gate–Source Voltage — Continuous  
— Non–repetitive (t ≤ 10 ms)  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
— Continuous @ 100°C  
— Single Pulse (t ≤ 10 µs)  
I
I
5.0  
3.2  
15  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation @ T = 25°C  
P
D
50  
0.4  
1.75  
Watts  
W/°C  
Watts  
C
Derate above 25°C  
Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size  
A
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
84  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 80 Vdc, V = 10 Vdc, I = 7.5 Apk, L = 3.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
R
θJA  
2.50  
100  
71.4  
°C/W  
— Junction to Ambient, when mounted to minimum recommended pad size  
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  
1234567...10

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MTD5N25ET4 替代型号

型号 品牌 替代类型 描述 数据表
MTD5P06V ONSEMI

类似代替

 Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06VT4G ONSEMI

功能相似

 功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK
MTD6N20ET4G ONSEMI

功能相似

 Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

与MTD5N25ET4相关器件

型号 品牌 获取价格 描述 数据表
MTD5N25E-T4 MOTOROLA

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 		5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET
MTD5P06E MOTOROLA

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 		TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
MTD5P06ET4 MOTOROLA

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 		Power Field-Effect Transistor, 5A I(D), 60V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal
MTD5P06V ONSEMI

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 		Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06V ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
MTD5P06V MOTOROLA

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 		TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
MTD5P06V_03 ONSEMI

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 		Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06V1 ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06V1 ONSEMI

获取价格

 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06V-1 ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3

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