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MTD5P06E

更新时间： 2024-11-20 22:29:11
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摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
10页 210K
描述
TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

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MTD5P06E 数据手册

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Order this document  
by MTD5P06E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
5.0 AMPERES  
60 VOLTS  
P–Channel Enhancement–Mode Silicon Gate  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.55 OHM  
DS(on)  
D
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
G
•
•
•
Diode is Characterized for Use in Bridge Circuits  
CASE 369A–13, Style 2  
DPAK  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
Surface Mount Package Available in 16 mm, 13–inch/2500  
Unit Tape & Reel, Add T4 Suffix to Part Number  
Replaces MTD4P05 and MTD4P06E  
S
•
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–Source Voltage  
V
60  
Vdc  
Vdc  
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
60  
GS  
Gate–Source Voltage — Continuous  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
± 20  
± 30  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
I
I
5.0  
3.8  
15  
Adc  
Apk  
D
D
— Continuous @ 100°C  
— Single Pulse (t ≤ 10 µs)  
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size  
P
D
40  
0.32  
1.75  
Watts  
W/°C  
Watts  
A
Operating and Storage Temperature Range  
T , T  
J stg  
–55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 5.0 Apk, L = 10 mH, R = 25 Ω)  
125  
GS L G  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
R
θJA  
3.13  
100  
71.4  
°C/W  
— Junction to Ambient, when mounted to minimum recommended pad size  
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  
1234567...10

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与MTD5P06E相关器件

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MTD5P06ET4 MOTOROLA

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 		Power Field-Effect Transistor, 5A I(D), 60V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal
MTD5P06V ONSEMI

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 		Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06V ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
MTD5P06V MOTOROLA

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 		TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
MTD5P06V_03 ONSEMI

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 		Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06V1 ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06V1 ONSEMI

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06V-1 ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06VT4 MOTOROLA

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
MTD5P06VT4 ROCHESTER

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 		5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3

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