Datasheet > MTD5P06V_03

MTD5P06V_03

更新时间： 2024-11-21 03:28:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	93K
描述
Power MOSFET 5 Amps, 60 Volts P−Channel DPAK

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中文翻译

获取价格

数据手册

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MTD5P06V_03 数据手册

MTD5P06V

Preferred Device

Power MOSFET

5 Amps, 60 Volts

P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

http://onsemi.com

TYP

I MAX

(BR)DSS

DS(on)

60 V

340 mW

5.0 A

• Avalanche Energy Specified

P−Channel

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 1.0 MΩ)

Gate−to−Source Voltage

− Continuous

± 15

± 25

Vdc

Vpk

− Non−repetitive (t ≤ 10 ms)

GSM

MARKING DIAGRAMS

Drain Current − Continuous @ 25°C

Drain Current − Continuous @ 100°C

Adc

Drain

Drain Current − Single Pulse (t ≤ 10 µs)

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

0.27

2.1

Watts

W/°C

Watts

DPAK

Total Power Dissipation @ T = 25°C

CASE 369C

(Note 2.)

Style 2

Gate

Operating and Storage Temperature Range T , T

−55 to

175

°C

stg

Drain

Source

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

125

Drain

(V = 25 Vdc, V = 10 Vdc, Peak

I = 5 Apk, L = 10 mH, R = 25 Ω)

Thermal Resistance

− Junction to Case

− Junction to Ambient (Note 1.)

− Junction to Ambient (Note 2.)

°C/W

°C

3.75

100

71.4

DPAK

CASE 369D

Style 2

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10

seconds

260

5P06V

Device Code

= Year

= Work Week

Gate Drain Source

1. When surface mounted to an FR4 board using the minimum

recommended pad size.

2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.

ORDERING INFORMATION

Device

Package

Shipping

NTD5P06V

DPAK

75 Units/Rail

DPAK

Straight Lead

NTD5P06V−1

NTD5P06VT4

DPAK

2500 Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

November, 2003 − Rev. 3

MTD5P06V/D

12 3 4 5 6 7 8

中文翻译

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与MTD5P06V_03相关器件

型号	品牌	获取价格	描述	数据表
MTD5P06V1	ROCHESTER	获取价格	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06V1	ONSEMI	获取价格	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06V-1	ROCHESTER	获取价格	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
MTD5P06VT4	MOTOROLA	获取价格	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
MTD5P06VT4	ROCHESTER	获取价格	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
MTD5P06VT4	ONSEMI	获取价格	功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK
MTD5P06VT4G	ONSEMI	获取价格	功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK
MTD-6000	VECOW	获取价格	Multi-Touch 16 : 9 Full HD Projected Capacitive Industrial Display, Front Panel IP65 Water
MTD6000PT	MARKTECH	获取价格	Photo Transistor
MTD6000PTT	MARKTECH	获取价格	Peak Sensitivity Wavelength: 880nm

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