Datasheet > MRFG35003M6T1_06

MRFG35003M6T1_06

更新时间： 2024-11-05 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	132K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

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MRFG35003M6T1_06 数据手册

Document Number: MRFG35003M6T1

Rev. 4, 1/2006

Freescale Semiconductor

Technical Data

Replaced by MRFG35003N6T1. There are no form, fit or function changes with this

part replacement. N suffix added to part number to indicate transition to lead-free

terminations.

MRFG35003M6T1

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-

ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

Class AB Customer Premise Equipment (CPE) applications.

3.5 GHz, 3 W, 6 V

POWER FET

GaAs PHEMT

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 6 Volts,

I_DQ= 180 mA

Output Power — 450 mWatts

Power Gain — 9 dB

Efficiency — 24%

• 3 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

Vdc

(2)

Total Device Dissipation @ T = 25°C

22.7

0.15

W/°C

(2)

Derate above 25°C

Gate-Source Voltage

RF Input Power

-5

Vdc

dBm

°C

Storage Temperature Range

stg

-65 to +150

175

(1)

Channel Temperature

°C

Operating Case Temperature Range

-20 to +85

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

(2)

Thermal Resistance, Junction to Case

6.6

°C/W

Table 3. Moisture Sensitivity Level

Test Methodology

Per JESD 22-A113, IPC/JEDEC J-STD-020

Rating

Package Peak Temperature

Unit

260

°C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

MRFG35003M6T1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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