Datasheet > MRFG35003NT1

MRFG35003NT1

更新时间： 2024-09-23 10:47:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	102K
描述
RF Reference Design Library Gallium Arsenide PHEMT

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中文翻译

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数据手册

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MRFG35003NT1 数据手册

Available at http://www.freescale.com/rf, Go to Tools

Rev. 1, 6/2005

Freescale Semiconductor

Technical Data

RF Reference Design Library

MRFG35003NT1

MRFG35003MT1

BWA

Gallium Arsenide PHEMT

RF Power Field Effect Transistors

Device Characteristics (From Device Data Sheet)

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class

AB linear base station applications.

BWA

2.4-2.5 GHz

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

I_DQ= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01% Probability)

Output Power — 300 mWatt

Power Gain — 11.5 dB

Efficiency — 25%

• 3 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• N Suffix Indicates Lead-Free Terminations

OUTPUT

Reference Design Characteristics

INPUT

• Typical Single-Channel W-CDMA Performance: -45 dBc ACPR,

2.45 GHz, 12 Volts, I_DQ= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH

(8.5 dB P/A @ 0.01% Probability)

MATC

Output Power — 350 mWatt

Power Gain — 12.5 dB

Efficiency — 26%

MRFG35003NT1(MT1) BWA 2.4-2.5 GHz REFERENCE DESIGN

This reference design is designed to demonstrate the typi-

cal RF performance characteristics of the

MRFG35003NT1(MT1) when applied for the 2.4-2.5 GHz

W-CDMA frequency band. The reference design is tuned for

the best tradeoff between good W-CDMA linearity and good

power capability and efficiency.

HEATSINKING

When operating this fixture please provide adequate heat-

sinking for the device. Excessive heating of the device will

prevent repeating of the included measurements.

REFERENCE DESIGN LIBRARY TERMS

AND CONDITIONS

NONLINEAR SIMULATION

Freescale is pleased to make this reference design

available for your use in development and testing of your

own product or products, without charge. The reference

design contains easy-to-copy, fully functional amplifier

designs. Where possible, it consists of “no tune” distrib-

uted element matching circuits designed to be as small as

possible, includes temperature compensated bias circuit-

ry, and is designed to be used as “building blocks” for our

customers.

To aid the design process and help reduce time to market

for our customers, Freescale provides device models for

several commercially available harmonic balance simulators.

Our model Library is available for all major computer platforms

supported by these simulators. For details on the RF model

library and supported harmonic balance simulators, go to the

following url:

http://www.freescale.com/rf/models

MRFG35003NT1 MRFG35003MT1 BWA

 Motorola, Inc. 2003

RF Reference Design Data

Freescale Semiconductor

12 3 4 5

中文翻译

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与MRFG35003NT1相关器件

型号	品牌	获取价格	描述	数据表
MRFG35005ANT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005MT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005MT1_06	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005NT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010A	NXP	获取价格	3.5GHZ 10W GAAS NI360HF
MRFG35010AN	NXP	获取价格	GaAs pHEMT Power FET, 500-5000 MHz, 9 W, 12 V
MRFG35010ANT1	FREESCALE	获取价格	Gallium Arsenide PHEMT
MRFG35010AR1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010AR1	NXP	获取价格	S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN

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