Datasheet > MRFG35005ANT1

MRFG35005ANT1

更新时间： 2024-09-23 10:47:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管放大器
页数	文件大小	规格书
13页	446K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRFG35005ANT1 数据手册

Document Number: MRFG35005AN

Rev. 2, 6/2009

Freescale Semiconductor

Technical Data

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Customer Premise Equipment (CPE) applications.

MRFG35005ANT1

• Typical Single-Carrier W-CDMA Performance: V_DD= 12 Volts, I_DQ

80 mA, P_out= 450 mWatts Avg., 3550 MHz, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 11 dB

3.5 GHz, 4.5 W, 12 V

POWER FET

Drain Efficiency — 26%

GaAs PHEMT

ACPR @ 5 MHz Offset — -44 dBc in 3.84 MHz Channel Bandwidth

• 4.5 Watts P1dB @ 3550 MHz, CW

Features

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

dBm

°C

Drain-Source Voltage

Gate-Source Voltage

RF Input Power

DSS

-5

Storage Temperature Range

stg

-65 to +150

175

(1)

Channel Temperature

°C

Table 2. Thermal Characteristics

Characteristic

(2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

13.7

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

1C (Minimum)

A (Minimum)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22-A113, IPC/JEDEC J-STD-020

260

°C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRFG35005ANT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

中文翻译

下载PDF

与MRFG35005ANT1相关器件

型号	品牌	获取价格	描述	数据表
MRFG35005MT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005MT1_06	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005NT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010A	NXP	获取价格	3.5GHZ 10W GAAS NI360HF
MRFG35010AN	NXP	获取价格	GaAs pHEMT Power FET, 500-5000 MHz, 9 W, 12 V
MRFG35010ANT1	FREESCALE	获取价格	Gallium Arsenide PHEMT
MRFG35010AR1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010AR1	NXP	获取价格	S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN
MRFG35010AR5	ROCHESTER	获取价格	C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN