MRFG35010MT1

更新时间： 2024-01-11 03:12:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	301K
描述
Gallium Arsenide PHEMT

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MRFG35010MT1 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

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by MRFG35010MT1/D

The RF GaAs Line

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

MRFG35010MT1

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

linear base station applications.

3.5 GHz, 9 W, 12 V

POWER FET

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

I_DQ= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01% Probability)

GaAs PHEMT

Output Power — 900 mW

Power Gain — 10 dB

Efficiency — 28%

• 9 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

CASE 466-02, STYLE 1

PLD-1.5

PLASTIC

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

Vdc

DSS

(2)

Total Device Dissipation @ T = 25°C

22.7

0.15

Watts

W/°C

(2)

Derate above 25°C

Gate-Source Voltage

RF Input Power

- 5

Vdc

dBm

°C

Storage Temperature Range

stg

- 65 to +150

175

(1)

Channel Temperature

°C

Operating Case Temperature Range

- 20 to +85

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(2)

Thermal Resistance, Junction to Case

6.6

°C/W

MOISTURE SENSITIVITY LEVEL

Test Methodology

Rating

Per JESD 22-A113

(1) For reliable operation, the operating channel temperature should not exceed 150°C.

(2) Simulated.

REV 2

MOTOROLA RF DEVICE DATA

MRFG35010MT1

 Motorola, Inc. 2003

For More Information On This Product,

Go to: www.freescale.com

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