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MRFIC0913 PDF预览

MRFIC0913

更新时间: 2024-11-08 22:51:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 放大器功率放大器GSM蜂窝
页数 文件大小 规格书
8页 144K
描述
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

MRFIC0913 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP16,.35,32Reach Compliance Code:unknown
风险等级:5.89构造:COMPONENT
最大输入功率 (CW):15 dBmJESD-609代码:e0
安装特点:SURFACE MOUNT端子数量:16
最大工作频率:915 MHz最小工作频率:880 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOP16,.35,32
电源:-4,4.8 V射频/微波设备类型:WIDE BAND HIGH POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAAS端子面层:Tin/Lead (Sn/Pb)
最大电压驻波比:10Base Number Matches:1

MRFIC0913 数据手册

 浏览型号MRFIC0913的Datasheet PDF文件第2页浏览型号MRFIC0913的Datasheet PDF文件第3页浏览型号MRFIC0913的Datasheet PDF文件第4页浏览型号MRFIC0913的Datasheet PDF文件第5页浏览型号MRFIC0913的Datasheet PDF文件第6页浏览型号MRFIC0913的Datasheet PDF文件第7页 
Order this document  
by MRFIC0913/D  
SEMICONDUCTOR TECHNICAL DATA  
The MRFIC Line  
This integrated circuit is intended for GSM class IV handsets. The device is  
specified for 2.8 watts output power and 48% minimum power added efficiency  
under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior  
performance, Motorola’s planar GaAs MESFET process is employed. The  
device is packaged in the PFP–16 Power Flat Package which gives excellent  
thermal performance through a solderable backside contact.  
900 MHz  
GSM CELLULAR  
INTEGRATED POWER AMPLIFIER  
GaAs MONOLITHIC  
INTEGRATED CIRCUIT  
Usable Frequency Range 800 to 1000 MHz  
Typical Output Power:  
36.0 dBm @ 5.8 Volts  
35.0 dBm @ 4.8 Volts  
31.5 dBm @ 3.6 Volts  
48% Minimum Power Added Efficiency  
Low Parasitic, High Thermal Dissipation Package  
Order MRFIC0913R2 for Tape and Reel Option.  
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.  
CASE 978–02  
(PFP–16)  
Device Marking = M0913  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Supply Voltage  
Symbol  
, V  
Value  
Unit  
Vdc  
dBm  
Vdc  
°C  
V
9
D1 D2  
RF Input Power  
P
in  
15  
–6  
Gate Voltage  
V
SS  
Ambient Operating Temperature  
Storage Temperature  
T
A
–40 to +85  
65 to +150  
10  
T
stg  
°C  
Thermal Resistance, Junction to Case  
R
°C/W  
θJC  
GND  
9
8
7
6
5
4
3
2
1
N/C  
V
V
10  
11  
12  
13  
D1  
D2  
GND  
GND  
V
RF OUT  
G2  
V
G1  
RF OUT  
GND  
GND  
14  
RF IN 15  
V
SS  
GND  
16  
N/C  
Pin Connections and Functional Block Diagram  
Motorola, Inc. 1996  

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