Datasheet > MRFG35030R5

MRFG35030R5

更新时间： 2024-11-09 03:38:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	254K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

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MRFG35030R5 数据手册

MRFG35030R5

Rev. 2, 3/2005

Freescale Semiconductor

Technical Data

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL base station applications with frequencies from 3400 to

3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in

Class AB applications.

MRFG35030R5

• Typical Single−Carrier W−CDMA Performance: V_DD= 12 Volts, I_DQ

650 mA, P_out= 3 Watts Avg., f = 3550 MHz, Channel Bandwidth =

3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain —12 dB

Drain Efficiency — 21%

3550 MHz, 30 W, 12 V

SINGLE W−CDMA

POWER FET

ACPR @ 5 MHz Offset — −41 dBc @ 3.84 MHz Channel Bandwidth

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

GaAs PHEMT

• Excellent Thermal Stability

• In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

CASE 1490−02, STYLE 1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

DSS

Vdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

Gate−Source Voltage

RF Input Power

0.53

W/°C

− 5

Vdc

dBm

°C

Storage Temperature Range

stg

− 40 to +175

175

(1)

Channel Temperature

°C

Operating Case Temperature Range

− 20 to +90

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.9

°C/W

1. For reliable operation, the operating channel temperature should not exceed 150°C.

MRFG35030R5

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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