Datasheet > MRFG35010ANT1

MRFG35010ANT1

更新时间： 2024-11-05 03:38:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管放大器
页数	文件大小	规格书
12页	250K
描述
Gallium Arsenide PHEMT

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数据手册

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MRFG35010ANT1 数据手册

Document Number: MRFG35010AN

Rev. 0, 5/2006

Freescale Semiconductor

Technical Data

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized

from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Customer Premise Equipment (CPE) applications.

MRFG35010ANT1

• Typical Single-Carrier W-CDMA Performance: V_DD= 12 Volts, I_DQ

130 mA, P_out= 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 10 dB

3.5 GHz, 9 W, 12 V

POWER FET

GaAs PHEMT

Efficiency — 25%

ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth

• 9 Watts P1dB @ 3550 MHz, CW

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

dBm

°C

Drain-Source Voltage

Gate-Source Voltage

RF Input Power

DSS

-5

Storage Temperature Range

stg

-65 to +150

175

(1)

Channel Temperature

°C

Operating Case Temperature Range

-40 to +85

°C

Table 2. Thermal Characteristics

Characteristic

(2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

6.5

°C/W

Case Temperature 77°C, 1 W CW

Table 3. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRFG35010ANT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRFG35010ANT1相关器件

型号	品牌	获取价格	描述	数据表
MRFG35010AR1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010AR1	NXP	获取价格	S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN
MRFG35010AR5	ROCHESTER	获取价格	C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN
MRFG35010AR5	NXP	获取价格	C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN
MRFG35010MT1	MOTOROLA	获取价格	Gallium Arsenide PHEMT
MRFG35010MT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010N	FREESCALE	获取价格	RF Power Field Effect Transistor
MRFG35010NT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010R1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010R1	NXP	获取价格	S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN