Datasheet > MRFE8VP8600HS

MRFE8VP8600HS

更新时间： 2024-01-18 18:37:06

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	321K
描述
140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor

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MRFE8VP8600HS 数据手册

Document Number: MRFE8VP8600H

Rev. 0, 7/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

MRFE8VP8600H

This high power transistor is designed for use in UHF TV broadcast

applications. The device has an integrated input matching network for better

power distribution and is ideal for use in both analog and digital TV

transmitters.

DBV--T Broadband Class AB Performance: V_DD= 50 Vdc, I_DQ= 1400 mA,

Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF.

470–860 MHz, 140 W AVG., 50 V

RF POWER LDMOS TRANSISTOR

Output

PAR

(dB)

(W)



out

Signal Type

(MHz)

(dB)

20.2

20.7

20.0

(%)

29.7

34.5

34.0

DVB--T (8k OFDM)

140 Avg.

474

610

810

8.9

8.2

8.4

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

out

Signal Type

VSWR

(MHz)

Result

860

DVB--T

(8k OFDM)

20:1 at all

Phase Angles

125

(3 dB

No Device

Degradation

NI--1230H–4S

Overdrive)

Features



Excellent Thermal Characteristics

High Gain for Reduced PA Size

High Efficiency for Class AB and Doherty Operations

Integrated Input Matching. Unmatched Output.

Drain A

Drain B

Gate A

Gate B

Extended Negative Gate--Source Voltage Range of –6.0 Vdc to +10 Vdc

(Top View)

Note: The backside of the package is the

source terminal for the transistors.

Figure 1. Pin Connections

MRFE8VP8600H

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...12

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