Datasheet > MRFE6VS25GN

MRFE6VS25GN

更新时间： 2024-09-24 15:17:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
34页	1637K
描述
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

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MRFE6VS25GN 数据手册

Document Number: MRFE6VS25N

Rev. 2, 03/2019

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

MRFE6VS25NR1

MRFE6VS25GNR1

RF power transistors designed for both narrowband and broadband ISM,

broadcast and aerospace applications operating at frequencies from 1.8 to

2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness

platform and are suitable for use in applications where high VSWRs are

encountered.

1.8--2000 MHz, 25 W, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance: V = 50 Volts

(1)

(W)

Frequency

(MHz)

(dB)



(%)

IMD

out

Signal Type

(dBc)

(2,6)

1.8 to 30

Two--Tone

(10 kHz spacing)

25 PEP

-- 3 0

-- 3 2

—

(3,6)

30--512

Two--Tone

(200 kHz spacing)

25 PEP

25 Peak

17.1

25.4

30.1

74.5

T O -- 2 7 0 -- 2

PLASTIC

(4)

512

Pulse (100 sec,

MRFE6VS25NR1

20% Duty Cycle)

(4)

512

25.5

22.5

74.7

—

(5)

1030

Load Mismatch/Ruggedness

Frequency

TO--270G--2

PLASTIC

MRFE6VS25GNR1

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(2)

>65:1

No Device

0.23

at all Phase

Angles

Degradation

(3 dB

Overdrive)

(3)

512

1.6

(3 dB

Overdrive)

Gate

Drain

(4)

512

Pulse

0.14 Peak

(3 dB

(100 sec, 20%

Duty Cycle)

Overdrive)

(4)

512

0.14

(3 dB

Overdrive

(Top View)

(5)

1030

0.34

(3 dB

Note: The backside of the package is the

source terminal for the transistor.

Overdrive

Figure 1. Pin Connections

1. Distortion products are referenced to one of two tones. See p. 13, 20.

2. Measured in 1.8--30 MHz broadband reference circuit.

3. Measured in 30--512 MHz broadband reference circuit.

4. Measured in 512 MHz narrowband test circuit.

5. Measured in 1030 MHz narrowband test circuit.

6. The values shown are the minimum measured performance numbers across the in-

dicated frequency range.

Features



Wide operating frequency range

Extreme ruggedness

Unmatched, capable of very broadband operation

Integrated stability enhancements

Low thermal resistance

Extended ESD protection circuit

 2012, 2019 NXP B.V.

MRFE6VS25NR1 MRFE6VS25GNR1

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...34

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与MRFE6VS25GN相关器件

型号	品牌	获取价格	描述	数据表
MRFE6VS25L	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
MRFE6VS25N	FREESCALE	获取价格	RF Power LDMOS Transistor
MRFE6VS25N	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
MRFE6VS25NR1	FREESCALE	获取价格	RF Power LDMOS Transistor
MRFE8VP8600H	NXP	获取价格	MRFE8VP8600H
MRFE8VP8600HS	NXP	获取价格	140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
MRFF959T1	NXP	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, SC-90, 3 PIN
MRFG35002N6AT1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6T1	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6T1_08	FREESCALE	获取价格	Gallium Arsenide PHEMT RF Power Field Effect Transistor

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