Datasheet > MRFE6VS25N

MRFE6VS25N

更新时间： 2022-11-24 14:27:46

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
24页	1302K
描述
RF Power LDMOS Transistor

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数据手册

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MRFE6VS25N 数据手册

Document Number: MRFE6VS25N

Rev. 0, 6/2012

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

MRFE6VS25NR1

RF power transistor designed for both narrowband and broadband ISM,

broadcast and aerospace applications operating at frequencies from 1.8 to

2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness

platform and is suitable for use in applications where high VSWRs are

encountered.

1.8--2000 MHz, 25 W, 50 V

WIDEBAND

Typical Performance: V = 50 Volts

RF POWER LDMOS TRANSISTOR

(W)

Frequency

(MHz)

(dB)

(%)

IMD

(dBc)

out

Signal Type

(1)

1.8 to 30

Two--Tone

25 PEP

-- 3 0

(10 kHz spacing)

512

Pulse (100 μsec,

25 Peak

25.4

74.5

—

20% Duty Cycle)

512

25.5

22.5

74.7

—

T O -- 2 7 0 -- 2

PLASTIC

1030

1. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Load Mismatch/Ruggedness

Frequency

(MHz)

(W)

Test

Voltage

out

Signal Type

VSWR

Result

Gate

Drain

512

1030

>65:1

at all Phase

Angles

(3 dB

Overdrive)

No Device

Degradation

Pulse

(100 μsec, 20%

Duty Cycle)

31 Peak

(3 dB

Overdrive)

(Top View)

30.5

(3 dB

Overdrive

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

(3 dB

Overdrive

Features

•

Wide Operating Frequency Range

Extremely Rugged

Unmatched, Capable of Very Broadband Operation

Integrated Stability Enhancements

Low Thermal Resistance

Extended ESD Protection Circuit

In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

MRFE6VS25NR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...24

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