Datasheet > MRFE6VS25N

MRFE6VS25N

更新时间： 2022-11-24 14:27:46

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
24页	1302K
描述
RF Power LDMOS Transistor

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MRFE6VS25N 数据手册

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

°C

Drain--Source Voltage

--0.5, +133

--6.0, +10

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

--40 to +150

--40 to +225

°C

(1,2)

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.2

°C/W

CW: Case Temperature 80°C, 25 W CW, 50 Vdc, I = 10 mA, 512 MHz

Thermal Impedance, Junction to Case

0.29

°C/W

Pulse: Case Temperature 77°C, 25 W Peak, 100 μsec Pulse Width,

20% Duty Cycle, 50 Vdc, I = 10 mA, 512 MHz

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

2, passes 2500 V

B, passes 250 V

IV, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

°C

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

—

133

—

142

—

400

—

nAdc

Vdc

GSS

(V = 5 Vdc, V = 0 Vdc)

Drain--Source Breakdown Voltage

(V = 0 Vdc, I = 50 mA)

(BR)DSS

Zero Gate Voltage Drain Leakage Current

(V = 50 Vdc, V = 0 Vdc)

μAdc

DSS

Zero Gate Voltage Drain Leakage Current

—

(V = 100 Vdc, V = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 85 μAdc)

1.5

2.0

—

2.0

2.4

2.5

3.0

—

Vdc

GS(th)

GS(Q)

DS(on)

Gate Quiescent Voltage

(V = 50 Vdc, I = 10 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(V = 10 Vdc, I = 210 mAdc)

0.28

Dynamic Characteristics

Reverse Transfer Capacitance

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

—

0.26

14.2

39.2

—

rss

Output Capacitance

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

oss

Input Capacitance

iss

(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

(continued)

MRFE6VS25NR1

RF Device Data

Freescale Semiconductor, Inc.

123 4 5 6 7...24

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