Datasheet > MRFE6VS25N

MRFE6VS25N

更新时间： 2022-11-24 14:27:46

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
24页	1302K
描述
RF Power LDMOS Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRFE6VS25N 数据手册

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 10 mA, P = 25 W Peak (5 W Avg.), f = 512 MHz,

out

100 μsec Pulse Width, 20% Duty Cycle

Power Gain

24.0

25.4

74.5

-- 1 6

27.0

—

Drain Efficiency

70.0

—

Input Return Loss

IRL

-- 1 0

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I = 10 mA)

Frequency

(MHz)

Signal

Type

out

(W)

VSWR

Test Voltage, V

Result

512

Pulse

>65:1

31 Peak

No Device Degradation

(100 μsec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive)

30.5

(3 dB Overdrive)

MRFE6VS25NR1

RF Device Data

Freescale Semiconductor, Inc.

1 234 5 6 7...24

中文翻译

下载PDF

与MRFE6VS25N相关器件

型号	品牌	描述	获取价格	数据表
MRFE6VS25NR1	FREESCALE	RF Power LDMOS Transistor	获取价格
MRFE8VP8600H	NXP	MRFE8VP8600H	获取价格
MRFE8VP8600HS	NXP	140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor	获取价格
MRFF959T1	NXP	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, SC-90, 3 PIN	获取价格
MRFG35002N6AT1	FREESCALE	Gallium Arsenide PHEMT RF Power Field Effect Transistor	获取价格
MRFG35002N6T1	FREESCALE	Gallium Arsenide PHEMT RF Power Field Effect Transistor	获取价格