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MRFE6VS25L PDF预览

MRFE6VS25L

更新时间: 2024-11-06 17:00:59
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
26页 1073K
描述
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

MRFE6VS25L 数据手册

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Document Number: MRFE6VS25L  
Rev. 1, 03/2017  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
High Ruggedness N--Channel  
Enhancement--Mode Lateral MOSFET  
MRFE6VS25L  
RF power transistor designed for both narrowband and broadband ISM,  
broadcast and aerospace applications operating at frequencies from 1.8 to  
2000 MHz. This device is fabricated using NXP’s enhanced ruggedness  
platform and is suitable for use in applications where high VSWRs are  
encountered.  
1.8--2000 MHz, 25 W, 50 V  
WIDEBAND  
RF POWER LDMOS TRANSISTOR  
Typical Performance: VDD = 50 Vdc  
P
(W)  
Frequency  
(MHz)  
G
(dB)  
η
(%)  
IMD  
(dBc)  
out  
ps  
D
Signal Type  
(1,3)  
1.8--30  
Two--Tone  
(10 kHz spacing)  
25 PEP  
25.0  
50.0  
-- 2 8  
-- 3 2  
(2,3)  
30--512  
Two--Tone  
(200 kHz spacing)  
25 PEP  
25 Peak  
17.3  
25.9  
32.0  
74.0  
(4)  
512  
Pulse  
(100 μsec, 20%  
Duty Cycle)  
NI--360H--2L  
(4)  
512  
CW  
25  
26.0  
75.0  
Load Mismatch/Ruggedness  
Frequency  
P
Test  
in  
(MHz)  
Signal Type  
VSWR  
(W)  
Voltage  
Result  
(1)  
>65:1  
at all Phase  
Angles  
50  
No Device  
Degradation  
30  
CW  
0.11  
(3 dB  
Overdrive)  
Gate  
Drain  
1
2
(2)  
512  
CW  
0.95  
(3 dB  
Overdrive)  
(4)  
(4)  
(Top View)  
512  
512  
Pulse  
(100 μsec, 20%  
Duty Cycle)  
0.14 Peak  
(3 dB  
Overdrive)  
Note: The backside of the package is the  
source terminal for the transistor.  
CW  
0.14  
(3 dB  
Figure 1. Pin Connections  
Overdrive)  
1. Measured in 1.8--30 MHz broadband reference circuit.  
2. Measured in 30--512 MHz broadband reference circuit.  
3. The values shown are the minimum measured performance numbers across the in-  
dicated frequency range.  
4. Measured in 512 MHz narrowband test circuit.  
Features  
Wide operating frequency range  
Extreme ruggedness  
Unmatched, capable of very broadband operation  
Integrated stability enhancements  
Low thermal resistance  
Extended ESD protection circuit  
© 2012, 2017 NXP B.V.  

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