Datasheet > MRFE6VP6300H

MRFE6VP6300H

更新时间： 2024-11-07 02:52:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	1051K
描述
RF Power Field Effect Transistors

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中文翻译

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数据手册

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MRFE6VP6300H 数据手册

Document Number: MRFE6VP6300H

Rev. 1, 7/2011

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

High Ruggedness N--Channel

MRFE6VP6300HR3

MRFE6VP6300HSR3

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

1.8--600 MHz, 300 W, 50 V

LATERAL N--CHANNEL

BROADBAND

•

Typical Performance: V_DD= 50 Volts, I_DQ= 100 mA

(W)

(dB)

(%)

IRL

(dB)

out

Signal Type

(MHz)

RF POWER MOSFETs

Pulsed (100 μsec,

300 Peak

230

26.5

74.0

-- 1 6

20% Duty Cycle)

300 Avg.

130

25.0

80.0

-- 1 5

•

Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,

at all Phase Angles

•

300 Watts CW Output Power

•

300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec

CASE 465M--01, STYLE 1

N I -- 7 8 0 -- 4

Capable of 300 Watts CW Operation

MRFE6VP6300HR3

Features

•

Unmatched Input and Output Allowing Wide Frequency Range Utilization

Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Characterized with Series Equivalent Large--Signal Impedance Parameters

RoHS Compliant

CASE 465H--02, STYLE 1

NI--780S--4

MRFE6VP6300HSR3

NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,

13 inch Reel. For R5 Tape and Reel options, see p. 14.

•

NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,

RF /V

out DS

in GS

13 inch Reel. For R5 Tape and Reel options, see p. 14.

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Symbol

Value

--0.5, +130

--6.0, +10

--65 to +150

150

Unit

Vdc

°C

RF /V

out DS

RF /V

in GS

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

stg

(Top View)

°C

Figure 1. Pin Connections

Total Device Dissipation @ T = 25°C

1050

5.26

Derate above 25°C

W/°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

(4)

Thermal Resistance, Junction to Case

°C/W

Pulsed: Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle,

50 Vdc, I = 100 mA, 230 MHz

CW: Case Temperature 87°C, 300 W CW, 50 Vdc, I

0.05

0.19

= 1100 mA, 230 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Same test circuit is used for both pulsed and CW.

MRFE6VP6300HR3 MRFE6VP6300HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

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与MRFE6VP6300H相关器件

型号	品牌	获取价格	描述	数据表
MRFE6VP6300HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRFE6VP6300HR3	NXP	获取价格	RF Power Field Effect Transistors
MRFE6VP6300HR3_11	FREESCALE	获取价格	RF Power Field Effect Transistors
MRFE6VP6300HS	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MRFE6VP6300HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRFE6VP6300HSR3	NXP	获取价格	RF Power Field Effect Transistors
MRFE6VP6600GN	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V
MRFE6VP6600N	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V
MRFE6VP8600H	FREESCALE	获取价格	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRFE6VP8600HR5	NXP	获取价格	LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V

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