Document Number: MRFE6VP8600H
Rev. 1, 9/2011
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Device has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
•
Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @
±4 MHz Offset with an Integration Bandwidth of 4 kHz.
470--860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
P
(W)
f
G
η
(%)
ACPR
(dBc)
IRL
(dB)
out
ps
D
Signal Type
(MHz) (dB)
DVB--T (8k OFDM)
125 Avg.
860 19.3
30.0
--60.5
-- 1 2
•
Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pulsed Width = 100 μsec, Duty Cycle = 10%
P
(W)
f
G
η
D
out
ps
Signal Type
(MHz)
(dB)
19.3
20.0
18.8
(%)
47.1
53.1
48.9
CASE 375D--05, STYLE 1
NI--1230
Pulsed
600 Peak
470
650
860
MRFE6VP8600HR6
Features
•
Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated Pout
)
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP8600HSR6
•
•
•
•
•
Exceptional Efficiency for Class AB Analog or Digital Television Operation
Full Performance across Complete UHF TV Spectrum, 470--860 MHz
Capable of 600 Watt CW Output Power with Adequate Thermal Management
Integrated Input Matching
Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V
− Improves Class C Performance, e.g. in a Doherty Peaking Stage
PARTS ARE PUSH--PULL
− Enables Fast, Easy and Complete Shutdown of the Amplifier
•
Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
Excellent Thermal Characteristics
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Gate 1
Gate 2
Drain 1
Drain 2
3
4
1
2
•
•
•
Table 1. Maximum Ratings
Rating
(Top View)
Symbol
Value
Unit
Note: The backside of the package is the
source terminal for the transistor.
Drain--Source Voltage
V
--0.5, +130
--6.0, +10
--65 to +150
150
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
T
Figure 1. Pin Connections
stg
T
°C
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
1052
5.26
W
W/°C
C
D
(1,2)
Operating Junction Temperature
T
J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
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Freescale Semiconductor
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