Datasheet > MRFE6VP8600H

MRFE6VP8600H

更新时间： 2022-04-18 20:40:54

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
20页	1270K
描述
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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MRFE6VP8600H 数据手册

Table 2. Thermal Characteristics

(1,2)

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.19

°C/W

Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

2 (2001--4000 V)

B (201--400 V)

IV (>1000 V)

Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

(4)

Off Characteristics

Gate--Source Leakage Current

—

130

—

140

—

μAdc

Vdc

GSS

(V = 5 Vdc, V = 0 Vdc)

Drain--Source Breakdown Voltage

(V = 0 Vdc, I = 100 mA)

(BR)DSS

Zero Gate Voltage Drain Leakage Current

(V = 50 Vdc, V = 0 Vdc)

μAdc

DSS

Zero Gate Voltage Drain Leakage Current

—

(V = 100 Vdc, V = 0 Vdc)

On Characteristics

(4)

Gate Threshold Voltage

(V = 10 Vdc, I = 980 μAdc)

1.5

2.1

—

2.07

2.65

0.24

15.6

2.5

3.1

—

Vdc

GS(th)

GS(Q)

DS(on)

(5)

Gate Quiescent Voltage

(V = 50 Vdc, I = 1400 mAdc, Measured in Functional Test)

(4)

Drain--Source On--Voltage

(V = 10 Vdc, I = 2 Adc)

Forward Transconductance

(V = 10 Vdc, I = 20 Adc)

—

(4)

Dynamic Characteristics

(6)

Reverse Transfer Capacitance

—

1.49

79.9

264

—

rss

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

(6)

Output Capacitance

oss

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

(7)

Input Capacitance

iss

(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

(5)

Functional Tests

(In Freescale Narrowband Test Fixture, 50 ohm system) V = 50 Vdc, I = 1400 mA, P = 125 W Avg., f = 860 MHz,

DD DQ out

DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.

Power Gain

18.0

29.0

—

19.3

30.0

--60.5

-- 1 2

21.0

—

Drain Efficiency

Adjacent Channel Power Ratio

Input Return Loss

ACPR

IRL

--58.5

-- 9

dBc

—

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact

resistance of this TIM.

4. Each side of device measured separately.

5. Measurement made with device in push--pull configuration.

6. Part internally input matched.

7. Die capacitance value without internal matching.

(continued)

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

RF Device Data

Freescale Semiconductor

123 4 5 6 7...20

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