Datasheet > MMDT5401_11

MMDT5401_11

更新时间： 2024-11-14 10:51:55

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	223K
描述
Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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MMDT5401_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMDT5401

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Marking:K4M

Plastic-Encapsulate

Transistors

Ideal for Low Power Amplification and Switching

Ultra-small Surface Mount Package

Epitaxial Planar Die Construction

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

Maximum Ratings @ 25 C Unless Otherwise Specified

Symbol

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Dissipation

Rating

-150

Unit

V_CEO

V_CBO

V_EBO

I_C

P_C

T_J

SOT-363

-160

-5

-0.2

0.2

-55 to +150

Operating Junction Temperature

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=-10uAdc, I_C=0)

Collector Cutoff Current

(V_CB=-120Vdc,I_E=0)

Min

Max

Units

V_(BR)CEO

-150

---

Vdc

V_(BR)CBO

V_(BR)EBO

I_CBO

-160

-5

---

Vdc

---

0.05

-0.05

Emitter Cutoff Current

(V_EB=-3Vdc,I_C=0)

I_EBO

---

DC Current Gain

DIMENSIONS

h_FE

(I_C=-1mAdc, V_CE=-5Vdc)

(I_C=-10mAdc, V_CE=-5Vdc)

(I_C=-50mAdc, V_CE=-5Vdc)

---

240

---

INCHES

MIN

---

DIM

MAX

.014

.053

.096

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

.006

.045

.085

Collector-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

Base-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

Current Gain-Bandwidth Product

(V_CE=-10Vdc, I_C=-10mAdc, f=100MHz)

Output Capacitance

(V_CB=-5Vdc, f=1.0MHz, I_E=0)

Noise Figure

.026

0.65Nominal

V_CE(sat)

---

-0.2

-0.5

Vdc

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.80

1.40

2.20

0.10

1.10

0.46

0.15

---

V_BE(sat)

---

-1

.035

.010

.003

0.90

0.26

0.08

f_T

100

---

300

4.5

MHz

C_ob

---

(V_CE=-10V,I_C=-0.1mA, f=1KHz, R_S=1k=)

t_d

t_r

t_S

t_f

Delay Time

Rise Time

Storage Time

Fall Time

_CC=-3V,I_C=-10mA,

---

225

V_BE=-0.5V, I_B1=-I_B2=-1mA

V_CC=-3V, I_C=-10mA,

I_B1=-I_B2=-1mA

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Revision: A

2011/01/01

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与MMDT5401_11相关器件

型号	品牌	获取价格	描述	数据表
MMDT5401_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMDT5401_2	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA
MMDT5401-7-F	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401G-AL6-R	UTC	获取价格	Small Signal Bipolar Transistor
MMDT5401HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMDT5401L-AL6-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMDT5401Q	DIODES	获取价格	Dual PNP, 150V, 0.2A, SOT363
MMDT5401Q	YANGJIE	获取价格	SOT-363
MMDT5401-TP	MCC	获取价格	Plastic-Encapsulate Transistors

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