Datasheet > MMDT5451_1

MMDT5451_1

更新时间： 2024-11-14 05:49:23

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
5页	82K
描述
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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MMDT5451_1 数据手册

SPICE MODEL: MMDT5451

MMDT5451

COMPLEMENTARY NPN / PNP

SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

Complementary Pair

SOT-363

C₂

B₁

E₁

One 5551-Type NPN,

One 5401-Type PNP

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

Epitaxial Planar Die Construction

Ideal for Medium Power Amplification and Switching

Ultra-Small Surface Mount Package

E₂

B₂

C₁

0.65 Nominal

Lead Free/RoHS Compliant (Note 3)

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

8°

Mechanical Data

Case: SOT-363

0.90

0.25

0.10

0°

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

E₁, B₁, C₁= PNP5401 Section

E₂, B₂, C₂= NPN5551 Section

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

All Dimensions in mm

Lead Free Plating (Matte Tin Finish annealed

over Alloy 42 leadframe).

C₂

B₁

E₁

Terminal Connections: See Diagram

Marking (See Page 3): KNM

E₂

B₂

C₁

Ordering & Date Code Information: See Page 3

Weight: 0.006 grams (approx.)

@ T_A= 25°C unless otherwise specified

Maximum Ratings, NPN 5551 Section

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

NPN5551

180

Unit

Collector-Emitter Voltage

160

Emitter-Base Voltage

6.0

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

200

K/W

°C

P_d

200

R_qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

625

T_j, T_STG

-55 to +150

@ T_A= 25°C unless otherwise specified

Maximum Ratings, PNP 5401 Section

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

PNP5401

Unit

Collector-Base Voltage

-160

-150

Collector-Emitter Voltage

Emitter-Base Voltage

-5.0

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

-200

K/W

°C

P_d

200

R_qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

625

T_j, T_STG

-55 to +150

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

DS30171 Rev. 8 - 2

1 of 5

MMDT5451

www.diodes.com

ã Diodes Incorporated

12 3 4 5

中文翻译

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与MMDT5451_1相关器件

型号	品牌	获取价格	描述	数据表
MMDT5451_2	DIODES	获取价格	COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MMDT5451-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MMDT5451-7-F	DIODES	获取价格	COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMDT5451Q	DIODES	获取价格	Complementary, 160V, 0.2A, SOT363
MMDT5451Q	YANGJIE	获取价格	SOT-363
MMDT5451-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MMDT5451-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MMDT5551	DIODES	获取价格	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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