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MMDT5451-7 PDF预览

MMDT5451-7

更新时间: 2024-11-14 12:59:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
5页 198K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

MMDT5451-7 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ULTRA SMALL, PLASTIC PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.45Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:160 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMDT5451-7 数据手册

 浏览型号MMDT5451-7的Datasheet PDF文件第2页浏览型号MMDT5451-7的Datasheet PDF文件第3页浏览型号MMDT5451-7的Datasheet PDF文件第4页浏览型号MMDT5451-7的Datasheet PDF文件第5页 
MMDT5451  
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
Complementary Pair  
One 5551-Type NPN  
One 5401-Type PNP  
Epitaxial Planar Die Construction  
SOT-363  
Min  
A
B1  
Dim  
A
B
C
D
F
Max  
0.30  
1.35  
2.20  
C2  
E1  
0.10  
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
C
B
1.15  
2.00  
B2  
C1  
E2  
0.65 Nominal  
G
H
0.30  
1.80  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
H
J
Mechanical Data  
K
J
M
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
E1, B1, C1 = PNP5401 Section  
E2, B2, C2 = NPN5551 Section  
M
α
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
All Dimensions in mm  
Terminal Connections: See Diagram  
Marking Information: KNM, See Page 5  
Ordering & Date Code Information: See Page 5  
Weight: 0.006 grams (approximate)  
Maximum Ratings, NPN 5551 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
NPN5551  
180  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
160  
V
6.0  
V
Collector Current - Continuous  
Power Dissipation  
(Note 1)  
(Note 1, 2)  
(Note 1)  
200  
mA  
mW  
200  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Maximum Ratings, PNP 5401 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
PNP5401  
-160  
-150  
-5.0  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current – Continuous  
Power Dissipation  
(Note 1)  
(Note 1, 2)  
(Note 1)  
-200  
200  
mA  
mW  
K/W  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
°C  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Maximum combined dissipation.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
MMDT5451  
© Diodes Incorporated  
DS30171 Rev. 9 - 2  
1 of 5  
www.diodes.com  

MMDT5451-7 替代型号

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