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MMDT5451-13 PDF预览

MMDT5451-13

更新时间: 2024-11-14 14:53:51
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
4页 93K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

MMDT5451-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.5
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:160 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMDT5451-13 数据手册

 浏览型号MMDT5451-13的Datasheet PDF文件第2页浏览型号MMDT5451-13的Datasheet PDF文件第3页浏览型号MMDT5451-13的Datasheet PDF文件第4页 
SPICE MODEL: MMDT5451  
MMDT5451  
COMPLEMENTARY NPN / PNP  
SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
·
·
Complementary Pair  
SOT-363  
C2  
B1  
E1  
One 5551-Type NPN,  
One 5401-Type PNP  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
·
·
·
·
Epitaxial Planar Die Construction  
B
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
E2  
B2  
C1  
C
G
H
D
0.65 Nominal  
Available in Lead Free/RoHS Comliant Version  
(Note 3)  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
M
H
Mechanical Data  
J
L
D
F
·
·
Case: SOT-363  
K
0.90  
0.25  
0.10  
0°  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
L
M
E1, B1, C1 = PNP5401 Section  
E2, B2, C2 = NPN5551 Section  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
a
Terminals: Solderable per MIL-STD-202, Method 208  
All Dimensions in mm  
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 6, on Page 3  
·
·
·
·
Terminal Connections: See Diagram  
Marking (See Page 3): KNM  
Ordering & Date Code Information: See Page 3  
Weight: 0.006 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, NPN 5551 Section  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
NPN5551  
180  
Unit  
V
Collector-Emitter Voltage  
160  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1, 2)  
200  
mA  
mW  
K/W  
°C  
Pd  
200  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
625  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, PNP 5401 Section  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
PNP5401  
Unit  
V
Collector-Base Voltage  
-160  
-150  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1, 2)  
-200  
mA  
mW  
K/W  
°C  
Pd  
200  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
625  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Maximum combined dissipation.  
3. No purposefully added lead.  
DS30171 Rev. 7 - 2  
1 of 4  
MMDT5451  
www.diodes.com  
ã Diodes Incorporated  

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