Datasheet > MMDT5451

MMDT5451

更新时间： 2023-12-06 20:10:08

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	989K
描述
SOT-363

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中文翻译

获取价格

数据手册

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MMDT5451 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

ꢀ ꢀ ꢀ ꢀ

MMDT5451 DUAL TRANSISTOR (NPN+PNP)

FEATURES

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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ^{ꢀ ꢀ ꢀ}

ꢀ

Epitaxial Planar Die Construction

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Ideal for low Power Amplification and Switching

One 5551(NPN), one 5401(PNP)

MRKING:KNM

MAXIMUM RATINGS NPN 5551 (T^a=25ꢀ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Value

180

160

Units

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

0.2

P_C

0.2

R_©

625

ꢀ/W

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

ꢀ

ELECTRICAL CHARACTERISTICS NPN 5551 (Ta=25ꢀ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100ꢀA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10ꢀA,I_C=0

180

160

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

V_CB=120V,I_E=0

0.05

ꢀA

Emitter cut-off current

V_EB=4V,I_C=0

0.05

V_CE=5V,I_C=1mA

DC current gain

V_CE=5V,I_C=10mA

V_CE=5V,I_C=50mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_CB= 10V, f = 1.0MHz, I_E= 0

100

300

0.15

0.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Output Capacitance

C_obo

f_T

6.0

300

MHz

Current Gain-Bandwidth Product

V_CE= 10V, I_C= 10mA, f = 100MHz

V_CE= 5.0V, I_C= 200μA,

100

Noise Figure

8.0

R_S= 1.0k¡ꢀf = 1.0kHz

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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与MMDT5451相关器件

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MMDT5451_1	DIODES	获取价格	COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451_2	DIODES	获取价格	COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MMDT5451-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MMDT5451-7-F	DIODES	获取价格	COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMDT5451Q	DIODES	获取价格	Complementary, 160V, 0.2A, SOT363
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MMDT5451-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon