Datasheet > MMDT5451

MMDT5451

更新时间： 2024-11-14 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	83K
描述
Multi-Chip General Purpose TRANSISTOR (PNP and NPN)

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中文翻译

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数据手册

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MMDT5451 数据手册

RoHS

MMDT5451

MMDT5451 Multi-Chip General Purpose TRANSISTOR

SOT-363

(PNP and NPN)

FEATURES

Power dissipation

P_CM:

200

mW (Tamb=25℃)

Collector current

I_CM:

±200

Collector-base voltage

V_(BR)CBO

180/-160

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

TR2

TR1

MAKING: KNM

TR2(NPN 5551) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic=1mA, I_B=0

MIN

180

160

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA, I_C=0

V_CB=120V, I_E=0

I_EBO

V_EB=4V, I_C=0

Emitter cut-off current

_CE=5V, I_C=1mA

h_FE

250

DC current gain

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.15

0.2

V_CE(sat)

Collector-emitter saturation voltage

WEJ ELECTRONIC CO.,LTD

I_C=10mA, I_B=1mA

V_BE(sat)

Emitter-base saturation voltage

I_C=50mA, I_B=5mA

100

MHz

Transition frequency

Collector output capacitance

Noise Figure

f_T

V_CE=10V, I_C=10mA, f=100MHz

C_ob

_CB=10V, I_E=0, f=1MHz

V_CE=5V, I_C=0.2mA, f=1KHz

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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