Datasheet > MMDT5401

MMDT5401

更新时间： 2024-11-14 10:51:55

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	407K
描述
Multi-Chip (PNP+PNP) Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMDT5401 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.56	Base Number Matches：	1

MMDT5401 数据手册

MMDT5401

Plastic-Encapsulate

Elektronische Bauelemente

Multi-Chip (PNP+PNP) Transistor

RoHS Compliant Product

SOT-363

8^o

.055(1.40)

.047(1.20)

.026TYP

Features

(0.65TYP)

.021REF

(0.525)REF

* Epitaxial Planar Die Construction

.053(1.35)

.045(1.15)

* Complementary NPN Type Available (MMDT5551)

.096(2.45)

.085(2.15)

.018(0.46)

.010(0.26)

C₂

B₁

E₁

.014(0.35)

.006(0.15)

.003(0.08)

.087(2.20)

.079(2.00)

.004(0.10)

.000(0.00)

E₂

B₂

C₁

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

Marking : K4M

Dimensions in inches and (millimeters)

Absolute Maximum Ratings

(Tamb=25 C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

Ratings

Unit

VCBO

VCEO

VEBO

-160

-150

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Dissipation

-0.2

0.2

^oC

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)

Parameter

Symbol

Test

conditions

I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100µA,

-160

-150

-5

V_(BR)CEOI_C= -1mA, I_B=0

V_(BR)EBOI_E=-10µA, I_C=0

I_CBO

I_EBO

V_CB=-120 V , I_E=0

-0.05

µA

Emitter cut-off current

V_EB=-3V , I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=-5 V, I_C= -1mA

V_CE=-5 V, I_C= -10mA

V_CE=-5 V, I_C= -50mA

DC current gain

240

V_CE(sat)1I_C=-10 mA, I_B=-1mA

V_CE(sat)2I_C=-50 mA, I_B=-5mA

V_BE(sat)1I_C= -10 mA, I_B=-1mA

V_BE(sat)2I_C= -50 mA, I_B=-5mA

-0.2

-0.5

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

-1

MHz

Transition frequency

Output Capacitance

Noise Figure

f_T

_CE= -10V, I_C= -10mA, f = 100MHz

100

300

V_CB=-10V, I_E= 0 ,

f=1MHz

C_ob

_CE= -5.0V, I_C= -200µA,

R^S= 10 ,f = 1.0kHz

8.0

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jan-2006 Rev.B

Page 1 of 2

中文翻译

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