Datasheet > MMBV105

MMBV105

更新时间： 2024-09-27 04:14:59

品牌	Logo	应用领域
ETL		二极管
页数	文件大小	规格书
2页	96K
描述
Silicon Tuning Diode

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MMBV105 数据手册

Silicon Tuning Diode

MMBV105GLT1

This device is designed in the surface Mount package for

general frequency control and tuning applications.It provides

solid-state reliability in replacement of mechanical

tuning methods.

• Controlled and Uniform Tuning Ration

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

ANODE

CATHODE

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

V _R

Value

Unit

Vdc

mAdc

Reverse Voltage

200

Forward Current

I _F

Device Dissipation @T _A= 25°C

Derate above 25°C

P _D

225

1.8

mW/°C

°C

Junction Temperature

Storage Temperature Range

DEVICE MARKING

MMBV105GLT1=M4E

T _J

+125

T _stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

( I _R=10µAdc)

Symbol

Min

Max

Unit

V _(BR)R

—

Vdc

Reverse Voltage Leakage Current

( V_R=28Vdc)

I _R

—

nAdc

C _T

V_R=25Vdc,f =1.0MHz

C _R

_R=3.0Vdc

C₃/C₂₅

Device Type

f=50MHz

f=1.0MHz

Min

Max

Typ

Min

Max

MMBV105GLT1

1.5

2.8

250

4.0

6.5

I1–1/2

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