Datasheet > MMBV105GLT1_06

MMBV105GLT1_06

更新时间： 2024-02-20 07:18:19

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	46K
描述
Silicon Tuning Diode

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MMBV105GLT1_06 数据手册

MMBV105GLT1

Preferred Device

Silicon Tuning Diode

This device is designed in the Surface Mount package for general

frequency control and tuning applications. It provides solid−state

reliability in replacement of mechanical tuning methods.

Features

http://onsemi.com

• Controlled and Uniform Tuning Ratio

• Pb−Free Package is Available

Cathode

Anode

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

Forward Current

200

mAdc

Device Dissipation @ T = 25°C

225

1.8

mW/°C

Derate above 25°C

Junction Temperature

+125

°C

Storage Temperature Range

stg

−55 to +150

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

SOT−23 (TO−236)

CASE 318

STYLE 8

MARKING DIAGRAM

M4EM G

M4E = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBV105GLT1

SOT−23 3,000 / Tape & Reel

MMBV105GLT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MMBV105GLT1/D

12 3

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