Datasheet > MMBV109

MMBV109

更新时间： 2024-01-14 14:52:46

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	146K
描述
Silicon Epicap Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMBV109 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.79
标称二极管电容：	29 pF	二极管类型：	VARIABLE CAPACITANCE DIODE
JESD-609代码：	e0	最小质量因数：	200
最大重复峰值反向电压：	30 V	子类别：	Varactors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

MMBV109 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Epicap Diode

MMBV109LT1

MBV109T1

MV209

26–32 pF

VOLTAGE VARIABLE

CAPACITANCE DIODES

Designed for general frequency control and tuning applications;

providing solid–state reliability in replacement of mechanical tuning

methods.

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

ANODE

CATHODE

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUMRATINGS

Rating

Symbol

Value

MMBV109LT1

Unit

MBV109T1

MV209

Reverse Voltage

Forward Current

V _R

I _F

Vdc

mAdc

200

Device Dissipation

@T _A= 25°C

P _D

280

2.8

200

2.0

+125

200

1.6

mW/°C

°C

Derate above 25°C

Junction Temperature

Storage Temperature Range

DEVICEMARKING

T _J

T _stg

–55 to +150

°C

MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

( I _R= 10 µ Adc)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Vdc

Reverse Voltage Leakage Current

( V _R= 25Vdc)

Diode Capacitance Temperature Coefficient

(V _R= 3.0 Vdc, f = 1.0 MHz)

I _R

—

0.1

—

mAdc

TC _C

300

ppm/°C

Q, Figure of

Merit

C_R,Capacitance

Ratio

C _TDiode Capacitance

V_R=3.0Vdc, f =1.0MHz

V _R= 3.0Vdc

f = 50MHz

C₃/ C ₂₅

f=1.0MHz (Note 1)

Device Type

Min

Nom

Max

Min

200

Min

5.0

Max

6.5

MBV109T1, MMBV109LT1, MV209

1. C _Ris the ratio of C _tmeasured at 3 V dc divided by C _tmeasured at 25 Vdc.

MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.

MBV109. MMBV109*. MV209*–1/2

中文翻译

下载PDF

与MMBV109相关器件

型号	品牌	获取价格	描述	数据表
MMBV109L	ONSEMI	获取价格	VHF BAND, 29pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, CASE 318-08, 3 PIN
MMBV109L	MOTOROLA	获取价格	Variable Capacitance Diode, Very High Frequency, 29pF C(T), 30V, Silicon, Hyperabrupt, TO-
MMBV109LT1	LRC	获取价格	Silicon Epicap Diode
MMBV109LT1	ONSEMI	获取价格	Silicon Epicap Diodes
MMBV109LT1G	ONSEMI	获取价格	Silicon Epicap Diodes
MMBV109LT3	ONSEMI	获取价格	Silicon Epicap Diodes
MMBV109LT3	MOTOROLA	获取价格	VHF BAND, 29pF, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB, PLASTIC, C
MMBV109LT3G	ONSEMI	获取价格	Silicon Epicap Diodes
MMBV2101	LRC	获取价格	Silicon Tuning Diode
MMBV2101L	MOTOROLA	获取价格	Variable Capacitance Diode, High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silic