是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
Is Samacsys: | N | 其他特性: | HIGH Q, HIGH RELIABILITY |
最小击穿电压: | 30 V | 配置: | SINGLE |
二极管电容容差: | 10% | 最小二极管电容比: | 2.5 |
标称二极管电容: | 6.8 pF | 二极管元件材料: | SILICON |
二极管类型: | VARIABLE CAPACITANCE DIODE | 频带: | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
最大功率耗散: | 0.225 W | 认证状态: | COMMERCIAL |
最小质量因数: | 450 | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
变容二极管分类: | ABRUPT | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBV2101LT1G | ONSEMI |
获取价格 |
Silicon Tuning Diodes |
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MMBV2101LT3 | MOTOROLA |
获取价格 |
HF-UHF BAND, 6.8pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08, |
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MMBV2103LT1 | ETL |
获取价格 |
Silicon Tuning Diode |
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MMBV2103LT1 | LRC |
获取价格 |
Silicon Tuning Diode |
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MMBV2103LT1 | ONSEMI |
获取价格 |
Silicon Tuning Diodes |
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MMBV2103LT1 | MOTOROLA |
获取价格 |
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 30V, Silico |
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MMBV2103LT3 | MOTOROLA |
获取价格 |
HF-UHF BAND, 10pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08, |
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MMBV2105L | ONSEMI |
获取价格 |
Silicon Tuning Diodes |
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MMBV2105L | MOTOROLA |
获取价格 |
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silico |
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MMBV2105LT1 | ETL |
获取价格 |
Silicon Tuning Diode |
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