MMBV2107LT1G

更新时间： 2024-01-19 12:24:07

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
5页	70K
描述
Silicon Tuning Diodes

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中文翻译

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数据手册
替代型号

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MMBV2107LT1G 数据手册

MMBV2101LT1 Series,

MV2105, MV2101, MV2109,

LV2209

Preferred Device

Silicon Tuning Diodes

These devices are designed in popular plastic packages for the high

volume requirements of FM Radio and TV tuning and AFC, general

frequency control and tuning applications. They provide solid−state

reliability in replacement of mechanical tuning methods. Also

available in a Surface Mount Package up to 33 pF.

http://onsemi.com

6.8−100 pF, 30 VOLTS

VOLTAGE VARIABLE

CAPACITANCE DIODES

Features

• High Q

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance − 10%

• Complete Typical Design Curves

• Pb−Free Packages are Available

Cathode

Anode

SOT−23

TO−92

Cathode

Anode

MAXIMUM RATINGS

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

MARKING

DIAGRAMS

Forward Current

200

mAdc

Forward Power Dissipation

xxx M G

@ T = 25°C

MMBV21xx

225

1.8

mW/°C

SOT−23 (TO−236)

CASE 318−08

STYLE 8

Derate above 25°C

@ T = 25°C

MV21xx

LV2209

280

2.8

mW/°C

Derate above 25°C

xxx = Specific Device Code

= Date Code*

= Pb−Free Package

Junction Temperature

+150

°C

Storage Temperature Range

stg

−55 to +150

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

yyyy

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

AYWW G

Characteristic

Symbol Min Typ Max

Unit

TO−92 (TO−226AC)

CASE 182

STYLE 1

Reverse Breakdown Voltage

Vdc

(BR)R

(I = 10 mAdc)

MMBV21xx, MV21xx

LV2209

−

yyyyyy = Specific Device Code

= Assembly Location

= Year

= Work Week

Reverse Voltage Leakage Current

−

0.1

mAdc

(V = 25 Vdc, T = 25°C)

Diode Capacitance Temperature Co-

efficient (V = 4.0 Vdc, f = 1.0 MHz)

−

280

−

ppm/°C

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MMBV2101LT1/D

12 3 4 5

中文翻译

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MMBV2107LT1G 替代型号

型号	品牌	替代类型	描述	数据表
MMBV2105LT1	LRC	功能相似	Silicon Tuning Diode

与MMBV2107LT1G相关器件

型号	品牌	获取价格	描述	数据表
MMBV2107LT3	MOTOROLA	获取价格	HF-UHF BAND, 22pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08,
MMBV2108LT1	ETL	获取价格	Silicon Tuning Diode
MMBV2108LT1	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2108LT1	LRC	获取价格	Silicon Tuning Diode
MMBV2108LT1G	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2109L	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2109L	MOTOROLA	获取价格	Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silico
MMBV2109LT1	MOTOROLA	获取价格	Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silico
MMBV2109LT1	ETL	获取价格	Silicon Tuning Diode
MMBV2109LT1	LRC	获取价格	Silicon Tuning Diode

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