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MMBV2109LT1G PDF预览

MMBV2109LT1G

更新时间： 2024-02-12 19:18:35
品牌 Logo 应用领域
安森美 - ONSEMI 二极管变容二极管光电二极管
页数 文件大小 规格书
5页 70K
描述
Silicon Tuning Diodes

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中文翻译

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MMBV2109LT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT-23包装说明：LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.73Is Samacsys：N
其他特性：HIGH Q, HIGH RELIABILITY最小击穿电压：30 V
配置：SINGLE二极管电容容差：10%
最小二极管电容比：2.5标称二极管电容：33 pF
二极管元件材料：SILICON二极管类型：VARIABLE CAPACITANCE DIODE
频带：HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJEDEC-95代码：TO-236AB
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260最大功率耗散：0.225 W
认证状态：COMMERCIAL最小质量因数：200
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40变容二极管分类：ABRUPT
Base Number Matches：1

MMBV2109LT1G 数据手册

 浏览型号MMBV2109LT1G的Datasheet PDF文件第2页浏览型号MMBV2109LT1G的Datasheet PDF文件第3页浏览型号MMBV2109LT1G的Datasheet PDF文件第4页浏览型号MMBV2109LT1G的Datasheet PDF文件第5页 
MMBV2101LT1 Series,  
MV2105, MV2101, MV2109,  
LV2209  
Preferred Device  
Silicon Tuning Diodes  
These devices are designed in popular plastic packages for the high  
volume requirements of FM Radio and TV tuning and AFC, general  
frequency control and tuning applications. They provide solid−state  
reliability in replacement of mechanical tuning methods. Also  
available in a Surface Mount Package up to 33 pF.  
http://onsemi.com  
6.8−100 pF, 30 VOLTS  
VOLTAGE VARIABLE  
CAPACITANCE DIODES  
Features  
• High Q  
• Controlled and Uniform Tuning Ratio  
• Standard Capacitance Tolerance − 10%  
• Complete Typical Design Curves  
• Pb−Free Packages are Available  
3
1
Cathode  
Anode  
SOT−23  
TO−92  
2
1
Cathode  
Anode  
MAXIMUM RATINGS  
Rating  
Reverse Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
MARKING  
DIAGRAMS  
3
V
R
Forward Current  
I
200  
mAdc  
F
1
Forward Power Dissipation  
P
D
2
xxx M G  
@ T = 25°C  
MMBV21xx  
225  
1.8  
mW  
mW/°C  
SOT−23 (TO−236)  
CASE 318−08  
STYLE 8  
A
G
Derate above 25°C  
1
@ T = 25°C  
MV21xx  
LV2209  
280  
2.8  
mW  
mW/°C  
A
Derate above 25°C  
xxx = Specific Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Junction Temperature  
T
+150  
°C  
°C  
J
Storage Temperature Range  
T
stg  
−55 to +150  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
yy  
yyyy  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
AYWW G  
Characteristic  
Symbol Min Typ Max  
Unit  
TO−92 (TO−226AC)  
G
CASE 182  
STYLE 1  
1
Reverse Breakdown Voltage  
V
Vdc  
(BR)R  
2
(I = 10 mAdc)  
R
MMBV21xx, MV21xx  
LV2209  
30  
25  
−
−
−
−
yyyyyy = Specific Device Code  
A
Y
= Assembly Location  
= Year  
= Work Week  
Reverse Voltage Leakage Current  
I
−
−
0.1  
mAdc  
R
(V = 25 Vdc, T = 25°C)  
R
A
WW  
G
Diode Capacitance Temperature Co-  
efficient (V = 4.0 Vdc, f = 1.0 MHz)  
TC  
−
280  
−
ppm/°C  
= Pb−Free Package  
C
R
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBV2101LT1/D  
12345

中文翻译

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MMBV2109LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBV2109LT1 ONSEMI

完全替代

 Silicon Tuning Diodes
FMMV2109TA DIODES

类似代替

 Variable Capacitance Diode, 33pF C(T), 30V, Silicon, Abrupt
MMBV2109LT1 MOTOROLA

功能相似

 Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silico

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