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MMBV3102LT1G PDF预览

MMBV3102LT1G

更新时间: 2024-01-08 07:39:25
品牌 Logo 应用领域
安森美 - ONSEMI 二极管变容二极管光电二极管
页数 文件大小 规格书
3页 48K
描述
Silicon Tuning Diode

MMBV3102LT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.73其他特性:HIGH Q, HIGH RELIABILITY
最小击穿电压:30 V配置:SINGLE
二极管电容容差:11.1%最小二极管电容比:4.5
标称二极管电容:22 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:COMMERCIAL
最小质量因数:200表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
变容二极管分类:HYPERABRUPTBase Number Matches:1

MMBV3102LT1G 数据手册

 浏览型号MMBV3102LT1G的Datasheet PDF文件第2页浏览型号MMBV3102LT1G的Datasheet PDF文件第3页 
MMBV3102LT1  
Preferred Device  
Silicon Tuning Diode  
This device is designed in the Surface Mount package for general  
frequency control and tuning applications. It provides solid−state  
reliability in replacement of mechanical tuning methods.  
Features  
http://onsemi.com  
High Q with Guaranteed Minimum Values at VHF Frequencies  
Controlled and Uniform Tuning Ratio  
Pb−Free Package is Available  
3
Cathode  
1
Anode  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Reverse Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
V
R
D
3
Forward Current  
I
200  
mAdc  
F
1
Device Dissipation @ T = 25°C  
P
225  
1.8  
mW  
mW/°C  
A
2
Derate above 25°C  
Junction Temperature  
T
+125  
°C  
°C  
J
Storage Temperature Range  
T
stg  
55 to +150  
SOT−23 (TO−236)  
CASE 318  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
STYLE 8  
MARKING DIAGRAM  
M4CM G  
G
1
M4C = Specific Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBV3102LT1  
SOT−23 3,000 / Tape & Reel  
MMBV3102LT1G SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
MMBV3102LT1/D  

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