Datasheet > MMBV3700LT1

MMBV3700LT1

更新时间： 2024-09-19 22:51:11

品牌	Logo	应用领域
乐山 - LRC		二极管测试
页数	文件大小	规格书
2页	59K
描述
Silicon Pin Diode

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中文翻译

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技术参数
数据手册

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MMBV3700LT1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.19	最小击穿电压：	200 V
最大二极管正向电阻：	1 Ω	二极管电阻测试电流：	10 mA
二极管类型：	PIN DIODE	最高工作温度：	150 °C
子类别：	PIN Diodes	表面贴装：	YES
Base Number Matches：	1

MMBV3700LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Pin Diode

These devices are designed primarily for VHF band switching appli-

cations but are also suitable for use in general–purpose switching

circuits. They are supplied in a cost–effective plastic package for

economical, high–volume consumer and industrial requirements. They

are also available in surface mount.

MMBV3700LT1

SILICON PIN

SWITCHING DIODE

• Long Reverse Recovery Time

t _rr= 300 ns (Typ)

• Rugged PIN Structure Coupled with Wirebond

Construction for Optimum Reliability

• Low Series Resistance @ 100 MHz —

R_S= 0.7 Ohms (Typ) @ I _F= 10 mAdc

• Reverse Breakdown Voltage = 200 V (Min)

CASE 318–08, STYLE8

SOT– 23 (TO–236AB)

CATHODE

ANODE

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol MV21XX

MMBV21XXLT1

Unit

Vdc

Reverse Voltage

V _R

P _D

200

Device Dissipation @T _A= 25°C

Derate above 25°C

280

2.8

200

2.0

mW/°C

°C

Junction Temperature

Storage Temperature Range

DEVICE MARKING

MMBV3700LT1=4R

T _J

+150

T _stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(I_R=10µAdc)

Symbol

Min

Typ

Max

Unit

V _(BR)R

200

—

Vdc

Diode Capacitance

(V_R=20 Vdc,f=1.0MHz)

Series Resistance(figure5)

(I_F=10mAdc)

C _T

R _S

—

0.7

—

1.0

0.1

—

Ω

Reverse Leakage Current

(V_R=150Vdc)

µAdc

Reverse Recovery Time

(I_F=I_R=10mAdc)

t _rr

300

I9–1/2

中文翻译

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