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MMBV3102LT1 PDF预览

MMBV3102LT1

更新时间: 2024-01-01 17:24:18
品牌 Logo 应用领域
乐山 - LRC 二极管变容二极管光电二极管
页数 文件大小 规格书
2页 98K
描述
Silicon Tuning Diode

MMBV3102LT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.73其他特性:HIGH Q, HIGH RELIABILITY
最小击穿电压:30 V配置:SINGLE
二极管电容容差:11.1%最小二极管电容比:4.5
标称二极管电容:22 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:COMMERCIAL
最小质量因数:200表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
变容二极管分类:HYPERABRUPTBase Number Matches:1

MMBV3102LT1 数据手册

 浏览型号MMBV3102LT1的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Silicon Tuning Diode  
MMBV3102LT1  
This device is designed in the Surface Mount package for  
general frequency controland tuning applications. It provides  
solid–state reliability in replacement of mechanical tuning  
methods.  
22 pF(Nominal) 30Volts  
VOLTAGE VARIABLE  
CAPACITANCE DIODES  
High Q with Guaranteed Minimum Values at VHF Frequencies  
Controlled and Uniform Tuning Ratio  
3
3
1
1
CATHODE  
ANODE  
2
CASE 318–08, STYLE 8  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS  
Rating  
Symbol  
V R  
Value  
30  
Unit  
Vdc  
mAdc  
mW  
Reverse Voltage  
Forward Current  
I F  
200  
Device Dissipation@T A = 25°C  
Derate above 25°C  
P D  
225  
1.8  
mW/°C  
°C  
Junction Temperature  
Storage Temperature Range  
T J  
+125  
T stg  
–55 to +150  
°C  
DEVICE MARKING  
MMBV3102LT1= M4C  
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)  
Characteristic  
Reverse Breakdown Voltage  
(IR=10µAdc)  
Symbol  
Min  
Typ  
Max  
Unit  
V (BR)R  
30  
Vdc  
Reverse Voltage Leakage Current  
(VR=15Vdc)  
IR  
0.1  
µAdc  
Diode Capacitance Temperature Coefficient  
(VR=4.0Vdc,f=1.0MHz)  
TCC  
300  
ppm/°C  
CR,Capacitance Ratio  
C3/C25  
Q,Figure of Merit  
VR=3.0Vdc  
CTDiode Capacitance  
VR=3.0Vdc,f=1.0MHz  
pF  
f=1.0MHz  
f=50MHz  
Device Type  
Min  
Nom  
Max  
Min  
Min  
Typ  
MMBV3102LT1  
20  
22  
25  
200  
4.5  
4.8  
MMBV3102LT1–1/2  

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