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MMBV3102 PDF预览

MMBV3102

更新时间: 2024-02-24 14:53:10
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
2页 98K
描述
Silicon Tuning Diode

MMBV3102 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.78Is Samacsys:N
其他特性:HIGH Q最小击穿电压:30 V
配置:SINGLE最小二极管电容比:4.5
标称二极管电容:22 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.225 W
认证状态:Not Qualified最小质量因数:200
最大重复峰值反向电压:30 V子类别:Varactors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED变容二极管分类:HYPERABRUPT
Base Number Matches:1

MMBV3102 数据手册

 浏览型号MMBV3102的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Silicon Tuning Diode  
MMBV3102LT1  
This device is designed in the Surface Mount package for  
general frequency controland tuning applications. It provides  
solid–state reliability in replacement of mechanical tuning  
methods.  
22 pF(Nominal) 30Volts  
VOLTAGE VARIABLE  
CAPACITANCE DIODES  
High Q with Guaranteed Minimum Values at VHF Frequencies  
Controlled and Uniform Tuning Ratio  
3
3
1
1
CATHODE  
ANODE  
2
CASE 318–08, STYLE 8  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS  
Rating  
Symbol  
V R  
Value  
30  
Unit  
Vdc  
mAdc  
mW  
Reverse Voltage  
Forward Current  
I F  
200  
Device Dissipation@T A = 25°C  
Derate above 25°C  
P D  
225  
1.8  
mW/°C  
°C  
Junction Temperature  
Storage Temperature Range  
T J  
+125  
T stg  
–55 to +150  
°C  
DEVICE MARKING  
MMBV3102LT1= M4C  
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)  
Characteristic  
Reverse Breakdown Voltage  
(IR=10µAdc)  
Symbol  
Min  
Typ  
Max  
Unit  
V (BR)R  
30  
Vdc  
Reverse Voltage Leakage Current  
(VR=15Vdc)  
IR  
0.1  
µAdc  
Diode Capacitance Temperature Coefficient  
(VR=4.0Vdc,f=1.0MHz)  
TCC  
300  
ppm/°C  
CR,Capacitance Ratio  
C3/C25  
Q,Figure of Merit  
VR=3.0Vdc  
CTDiode Capacitance  
VR=3.0Vdc,f=1.0MHz  
pF  
f=1.0MHz  
f=50MHz  
Device Type  
Min  
Nom  
Max  
Min  
Min  
Typ  
MMBV3102LT1  
20  
22  
25  
200  
4.5  
4.8  
MMBV3102LT1–1/2  

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