Datasheet > MMBV2109LT1

MMBV2109LT1

更新时间： 2024-09-30 04:14:59

品牌	Logo	应用领域
ETL		二极管
页数	文件大小	规格书
3页	123K
描述
Silicon Tuning Diode

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中文翻译

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数据手册

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MMBV2109LT1 数据手册

Silicon Tuning Diode

These devices are designed in the popular PLASTIC PACK-

AGE for high volumerequirements of FM Radio and TV tuning and

AFC, general frequency control andtuning applications.They pro-

vide solid–state reliability in replacement of mechanical tuning

methods. Also available in Surface Mount Package up to 33pF.

• High Q

MMBV2101LT1

MMBV2103LT1

MMBV2105LT1

MMBV2107LT1

MMBV2108LT1

MMBV2109LT1

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance —10%

• Complete Typical Design Curves

6.8-100p

30 VOLTS

VOLTAGE VARIABLE

CAPACITANCE DIODES

ANODE

CATHODE

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

MV21XX MMBV21XXLT1 Unit

Reverse Voltage

V _R

I _F

Vdc

Forward Current

200

mAdc

m W

mW/°C

°C

Device Dissipation @T _A= 25°C

Derate above 25°C

P _D

280

2.8

225

1.8

Junction Temperature

Storage Temperature Range

DEVICE MARKING

T _J

+150

T _stg

–55 to +150

°C

MMBV2101LT1=M4G

MMBV2103LT1=4H

MMBV2105LT1=4U

MMBV2107LT1=4W

MMBV2108LT1=4X

MMBV2109LT1=4J

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(I_R=1.0µAdc)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Vdc

Reverse Voltage Leakage Current

(V_R=25Vdc,T_A=25°C)

I_R

—

0.1

—

µAdc

Diode Capacitance Temperature Coefficient

(V_R=4.0Vdc,f=1.0MHz)

T_CC

280

ppm/°C

I6–1/3

12 3

中文翻译

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